Titanium Nitride Etchant TiN 22-7
Selective, controllable etchant for application in semiconductor fabrication and thin film microelectronics technology.
Titanium Nitride Etchant TiN 22-7 is designed for etching evaporated deposits. Excellent resolution, compatibility with both positive and negative photoresists, and minimal undercutting are readily achieved. Because TiN 22-7 is based on a hydrofluoric acid formulation, oxides are incompatible.
Titanium Nitride Etchant TiN 22-7 is supplied ready to use. Consistent agitation during etching is required to achieve consistent, uniform results. Etch rates may vary depending on the density of the deposit, temperature, and degree of agitation. Glass containers must be avoided.
PROPERTIES OF TRANSENE TITANIUM NITRIDE ETCHANT TiN 22-7
|How do I increase the etch rate?||1. The rate will approximately double with every 10°C increase in temperature.
2. Increase the rate of stirring or agitation.
|How do I reduce the etch rate?||Adding 1 part deionized water to 2 parts etchant will reduce the etch rate approximately 50%.|
|Do I need to dilute the etchant?||No, it is ready to use.|
|How do I reduce undercutting?||Increase the rate of stirring or agitation.|
|Etch Rate at 20°C||25-30 Å/sec.|
|Etch Capacity (rate declines at ~70%)||65 g/gallon|
|Shelf Life||1 year|
|Recommended Operating Temperatures||20-80oC (30-40oC most common)|
|Photoresist Recommendations||KLT6000 Series, KLT 5300 Series, HARE SQ (SU-8 type), TRANSIST, or PKP II|
|Select Compatible Materials||Au
See http://transene.com/etch-compatibility/ for more details.
|Select Incompatible Materials||Ni, Ti, glass, oxide, nitride, Ta|
|Compatible Plastics||HDPE, PP, Teflon, PFA, PVC|
|Country of Origin||USA|
|Available Sizes||Quart, Gallon, 5 Gallon, 55 Gallon|
|Incompatible Chemicals||Strong bases|
|Additional Information||Contains HF!|