Wright Etchant
AB Etchant

SEMICONDUCTOR DEFECT DELINEATION ETCHANTS

For characterization and identification of crystallographic defects in semiconductors.

WRIGHT ETCHANT – SILICON
AB ETCHANT – GALLIUM ARSENIDE

Wright Etchant reveals crystal dislocations, stacking faults, swirls, striations and slip lines. The etchant is applicable to (100) and (111) crystal orientations, for both p and n type crystals over a wide range of resistivities. Both float zone and Czochralski crystals may be characterized.

AB Etchant etches the (100) and (110) planes to reveal crystal dislocations, striations, faults, and slip lines.

The effectiveness of Wright Etchant and AB Etchant permits superior delineation of crystal defects. Slow etch rates and low exotherm account for precise control. Furthermore, the etched defects exhibit good crystallographic characteristics.

PROPERTIES:

Composition Strong oxidizing acid
pH < 1
Density 1.1 – 1.2
Etch Tank Polyethylene orpolypropylene
Rinse Water
Storage Room temperature:avoid heat
Disposal Dilute with water:neutralize with alkali
Etch Rate 1 μ/minute

CAUTION: Contains Hydrofluoric Acid
Use appropriate precautions.

Available in quart & gallon polyethylene bottles.

Semiconductor Polishing Etchants and
Defect Delineation Etchants

SILICON POLISHING ETCHANTS

Silicon polishing etchants are classical oxidation/reduction formulations designed to provide a slow, controllable anisotropic etch of silicon. Polishing etchants typically operate at 30-50°C. The diffusion-limited etching process requires agitation for an effective polish.

SILICON POLISHING ETCHANTS

White Etch 15 second etch time
Planer Etch 5mm/minute

SEMICONDUCTOR DEFECT DELINEATION ETCHANTS

Defect delineation etchants reveal crystal dislocations, striations, slip lines, and faults. Both n and p type semiconductors may be characterized with defect delineation etchants.

Etchant Material Application
Wright Etchant Silicon <100>, <111> orientations
Sirtl Etchant Silicon <111> orientation
Dash Etchant Silicon <111> or <100> orientation for n or p type, p type preferred
Secco Etchant Silicon <100> or <111>
PND Etchant Silicon p-n delineation
Wright-Jenkins Etchant Silicon Leaves defect-free regions smooth
AG Etchant Silicon Epitaxial fault layers
Sponheimer-Mills Etchant Silicon Junction delineation
AB Etchant Gallium Arsenide <100>, <110> orientations