AlPAD Etch 639
AlPAD Etch 639 is an oxide etchant designed to minimize attack on aluminum pads or other aluminum structures and on silicon surfaces. These oxides are commonly grown in vapox silox or other LPCVD devices. The deposited oxide is often used as a passivation layer over a metallized silicon substrate. The formulation of AlPAD Etch 639 includes a surfactant to ensure wetout over high surface energy substrates.
Deposited Oxide (Vapox/Silox) Etch Rate: 5000 A / minute @ 22oC
This product contains:
- Ammonium Fluoride
- Glacial Acetic Acid
- Glycol
- Surfactant
- Deionized Water
PROPERTIES OF TRANSENE AlPAD ETCH 639
| How do I increase the etch rate? | 1. The rate will approximately double with every 10°C increase in temperature. 2. Increase the rate of stirring or agitation. |
| How do I reduce the etch rate? | Adding 1 part deionized water to 2 parts etchant will reduce the etch rate approximately 50%. |
| Do I need to dilute the etchant? | No, it is ready to use. |
| How do I reduce undercutting? | Increase the rate of stirring or agitation. |
| Appearance | Water-white |
| pH | Mild acidic |
| Etch Rate at 22°C 40°C |
5,000 Å/min. 10,000 Å/min. |
| Etch Capacity | 0 g/gallon |
| Shelf Life | 1 year |
| Storage Conditions | Ambient |
| Filtration | 0.2 um |
| Recommended Operating Temperatures | 20-80oC (30-40oC most common) |
| Rinse | Deionized water; may be followed by alcohol rinse if desired. |
| Photoresist Recommendations | KLT6000 Series, KLT 5300 Series, HARE SQ (SU-8 type), TRANSIST, or PKP Type II |
| Select Compatible Materials | Aluminum, ceramic, gold, nickel, copper
See https://transene.com/etch-compatibility/ for more details. |
| Select Incompatible Materials | Silica, alumina, silicon nitride |
| Compatible Plastics | HDPE, PP, Teflon, PFA, PVC |
| Country of Origin | USA |
| Availability | 1-2 Business Days |
| Available Sizes | Quart, Gallon, 5 Gallon, 55 Gallon |
| Packaging | HDPE |
| Packing | 4 gallons/case |
| Isotropy | Isotropic |
| Incompatible Chemicals | — |
| Additional Information | — |
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