Advanced Materials for Electronics

Titanium Nitride Etchant TiN 22-7

Selective, controllable etchant for application in semiconductor fabrication and thin film microelectronics technology.

Titanium Nitride Etchant TiN 22-7 is designed for etching evaporated deposits. Excellent resolution, compatibility with both positive and negative photoresists, and minimal undercutting are readily achieved.  Because TiN 22-7 is based on a hydrofluoric acid formulation, oxides are incompatible.


Titanium Nitride Etchant TiN 22-7 is supplied ready to use.  Consistent agitation during etching is required to achieve consistent, uniform results.  Etch rates may vary depending on the density of the deposit, temperature, and degree of agitation.  Glass containers must be avoided.


How do I increase the etch rate? 1. The rate will approximately double with every 10°C increase in temperature.
2. Increase the rate of stirring or agitation.
How do I reduce the etch rate? Adding 1 part deionized water to 2 parts etchant will reduce the etch rate approximately 50%.
Do I need to dilute the etchant? No, it is ready to use.
How do I reduce undercutting? Increase the rate of stirring or agitation.
Appearance Clear, colorless
pH Strong acid
Etch Rate at 20°C 25-30 Å/sec.
Etch Capacity (rate declines at ~70%) 65 g/gallon
Shelf Life 1 year
Storage Conditions Ambient
Filtration 0.2 um
Recommended Operating Temperatures 20-80oC (30-40oC most common)
Rinse Deionized water
Photoresist Recommendations KLT6000 Series, KLT 5300 Series, HARE SQ (SU-8 type), TRANSIST, or PKP-308PI
Select Compatible Materials Au

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Select Incompatible Materials Ni, Ti, glass, oxide, nitride, Ta
Compatible Plastics HDPE, PP, Teflon, PFA, PVC
Country of Origin USA
Availability 1-2 days
Available Sizes Quart, Gallon, 5 Gallon, 55 Gallon
Packaging HDPE
Packing 4 gallons/case
Isotropy Isotropic
Incompatible Chemicals Strong bases
Additional Information Contains HF!