Indium Tin Oxide Etchant TE-100
Tin Oxide/Indium Tin Oxide Etchant TE-100 is a selective etchant for tin oxide and indium tin oxide (ITO) layers in microelectronics applications. TE-100 effectively etches ITO and tin oxide films deposited on ceramics, dielectrics, semiconductors, and many metals. TE-100 provides excellent definition and etch rate control. Broad compatibility with positive and negative photoresists is offered. TE-100 is not compatible with nickel, copper, nichrome, and aluminum.
ITO films are best prepared by first depositing a film of indium-tin. The indium-tin film is then oxidized in an oxygen plasma or at elevated temperatures in an oxygenating atmosphere. When etched, indium is solublized as a trivalent aquocomplex [In(H2O)6]3+ while tin forms a [SnCl6]2- anion.
PROPERTIES OF TRANSENE TIN OXIDE INDIUM ETCHANT TE-100
|How do I increase the etch rate?||1. The rate will approximately double with every 10°C increase in temperature.
2. Increase the rate of stirring or agitation.
|How do I reduce the etch rate?||Adding 1 part deionized water to 2 parts etchant will reduce the etch rate approximately 50%.|
|Do I need to dilute the etchant?||No, it is ready to use.|
|How do I reduce undercutting?||Increase the rate of stirring or agitation.|
|Etch Rate at 40-50°C||15-20 Å/sec.|
|Etch Capacity (rate declines at ~70%)||100 g/gallon|
|Shelf Life||1 year|
|Recommended Operating Temperatures||20-80oC (30-40oC most common)|
|Photoresist Recommendations||KLT6000 Series, KLT 5300 Series, HARE SQ (SU-8 type), TRANSIST, or PKP-308PI|
|Select Compatible Materials||Au, oxide, nitride, alumina
See https://transene.com/etch-compatibility/ for more details.
|Select Incompatible Materials||Al, Ni, Ti, Cu, Pd|
|Compatible Plastics||HDPE, PP, Teflon, PFA, PVC|
|Country of Origin||USA|
|Available Sizes||Quart, Gallon, 5 Gallon, 55 Gallon|
|Incompatible Chemicals||Strong bases, nitric acid|
|Additional Information||Immersion or spray application|