Advanced Materials for Electronics

NOVO SERIES POSITIVE PHOTORESIST DEVELOPERS

DESCRIPTION

Transene NOVO series positive photoresist developers are high purity alkaline TMAH-based inorganic solutions for developing exposed positive photoresist materials such as KLT 5300, KLT 6000, AZ-4620, 895I, and S1811.

Designed for ultra fine-line control of a broad range of positive resist materials including DNQ-novolac, deep ultraviolet (DUV), and lift off applications, NOVO resist developers are well suited for 193 nm applications down to the 90 nm node.  NOVO resist developers are essentially free of metal ionic contaminants.  NOVO developers are designed for use in photomask, integrated circuit, or other microelectronic applications in either batch immersion or spray processes.  Available with or without surfactant, NOVO chemistries may be customized to meet specific formulation requirements.  Standard concentrations:

PRODUCT TMAH CONCENTRATION TMAH NORMALITY
NOVO DEVELOPER 587 1.951-1.987% 0.214-0.218
NOVO DEVELOPER 591 2.12-2.16% 0.232-0.238
NOVO DEVELOPER 26 2.27-2.47% 0.26 nominal

APPLICATION

During the development cycle, the exposed photoresist is removed by the appropriate developer system in a spray or immersion process, exposing the desired pattern. To obtain very fine line resolution, it is recommended that spray processing be employed. Immersion development is adequate for less critical geometries, i.e.7μ or greater line widths and spacings, especially if mechanical or nitrogen bubbling is used. A typical development cycle is shown in the table below.

 Typical Development Cycle

Solution Time (seconds)
Developer 15 to 75
Water Rinse 20 to 30
Nitrogen Dry 15 to 20