NOVO SERIES POSITIVE PHOTORESIST DEVELOPERS
Transene NOVO series positive photoresist developers are high purity alkaline TMAH-based inorganic solutions for developing exposed positive photoresist materials such as KLT 5300, KLT 6000, AZ-4620, 895I, and S1811.
Designed for ultra fine-line control of a broad range of positive resist materials including DNQ-novolac, deep ultraviolet (DUV), and lift off applications, NOVO resist developers are well suited for 193 nm applications down to the 90 nm node. NOVO resist developers are essentially free of metal ionic contaminants. NOVO developers are designed for use in photomask, integrated circuit, or other microelectronic applications in either batch immersion or spray processes. Available with or without surfactant, NOVO chemistries may be customized to meet specific formulation requirements. Standard concentrations:
|PRODUCT||TMAH CONCENTRATION||TMAH NORMALITY|
|NOVO DEVELOPER 587||1.951-1.987%||0.214-0.218|
|NOVO DEVELOPER 591||2.12-2.16%||0.232-0.238|
|NOVO DEVELOPER 26||2.27-2.47%||0.26 nominal|
During the development cycle, the exposed photoresist is removed by the appropriate developer system in a spray or immersion process, exposing the desired pattern. To obtain very fine line resolution, it is recommended that spray processing be employed. Immersion development is adequate for less critical geometries, i.e.7μ or greater line widths and spacings, especially if mechanical or nitrogen bubbling is used. A typical development cycle is shown in the table below.
Typical Development Cycle
|Developer||15 to 75|
|Water Rinse||20 to 30|
|Nitrogen Dry||15 to 20|