Wright Etchant
AB Etchant
SEMICONDUCTOR DEFECT DELINEATION ETCHANTS
For characterization and identification of crystallographic defects in semiconductors.
WRIGHT ETCHANT – SILICON
AB ETCHANT – GALLIUM ARSENIDE
Wright Etchant reveals crystal dislocations, stacking faults, swirls, striations and slip lines. The etchant is applicable to (100) and (111) crystal orientations, for both p and n type crystals over a wide range of resistivities. Both float zone and Czochralski crystals may be characterized.
AB Etchant etches the (100) and (110) planes to reveal crystal dislocations, striations, faults, and slip lines.
The effectiveness of Wright Etchant and AB Etchant permits superior delineation of crystal defects. Slow etch rates and low exotherm account for precise control. Furthermore, the etched defects exhibit good crystallographic characteristics.
PROPERTIES:
Composition | Strong oxidizing acid |
pH | < 1 |
Density | 1.1 – 1.2 |
Etch Tank | Polyethylene orpolypropylene |
Rinse | Water |
Storage | Room temperature:avoid heat |
Disposal | Dilute with water:neutralize with alkali |
Etch Rate | 1 μ/minute |
CAUTION: Contains Hydrofluoric Acid
Use appropriate precautions.
Available in quart & gallon polyethylene bottles.
Semiconductor Polishing Etchants and
Defect Delineation Etchants
SILICON POLISHING ETCHANTS
Silicon polishing etchants are classical oxidation/reduction formulations designed to provide a slow, controllable anisotropic etch of silicon. Polishing etchants typically operate at 30-50°C. The diffusion-limited etching process requires agitation for an effective polish.
SILICON POLISHING ETCHANTS
White Etch | 15 second etch time |
Planer Etch | 5mm/minute |
SEMICONDUCTOR DEFECT DELINEATION ETCHANTS
Defect delineation etchants reveal crystal dislocations, striations, slip lines, and faults. Both n and p type semiconductors may be characterized with defect delineation etchants.
Etchant | Material | Application |
Wright Etchant | Silicon | <100>, <111> orientations |
Sirtl Etchant | Silicon | <111> orientation |
Dash Etchant | Silicon | <111> or <100> orientation for n or p type, p type preferred |
Secco Etchant | Silicon | <100> or <111> |
PND Etchant | Silicon | p-n delineation |
Wright-Jenkins Etchant | Silicon | Leaves defect-free regions smooth |
AG Etchant | Silicon | Epitaxial fault layers |
Sponheimer-Mills Etchant | Silicon | Junction delineation |
AB Etchant | Gallium Arsenide | <100>, <110> orientations |